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GeneSiC's 3rd Generation (G3R™) 750V SiC MOSFETs Offer Unparalleled Performance and Reliability

Posted 07 Jun-2021 08:54 PM by Roxie | 565

Dulles, VA, June 7, 2021 -- GeneSiC Semiconductor's next-generation 750V G3R„¢SiC MOSFETs will deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include low on-state drops at operating temperatures, faster switching speeds, increased power density, minimal ringing (low EMI) and compact system size. GeneSiC's G3R„¢, offered in optimized low-inductance discrete packages (SMD and through hole), are optimized to operate with lowest power losses under all operating conditions and ultra-fast switching speeds. These devices have substantially better performance levels as compared to contemporary SiC MOSFETs.

œHigh-efficiency energy usage has become a critical deliverable in next-generation power converters and SiC power devices continue to be the key components driving this revolution. After years of development work towards achieving the lowest on-state resistance and robust short circuit and avalanche performance, we are excited to release the industry's best performing 750V SiC MOSFETs. Our G3R„¢ enable power electronics designers to meet the challenging efficiency, power density and quality goals in applications like solar inverters, EV on-board chargers and server/telecom power supplies. An assured quality, supported by fast turn-around and automotive-qualified high volume manufacturing further enhances their value proposition." said Dr. Ranbir Singh, President at GeneSiC Semiconductor.

G3R60MT07J “ 750V 60m© G3R„¢ TO-263-7 SiC MOSFET
G3R60MT07D “ 750V 60m© G3R„¢ TO-247-3 SiC MOSFET
G3R60MT07K “ 750V 60m© G3R„¢ TO-247-4 SIC MOSFET

Features:
- Industry's lowest gate charge (QG) and internal gate resistance (RG(INT) )
- Lowest RDS(ON) change with temperature
- Low output capacitance (COSS ) and miler capacitance (CGD )
- 100% avalanche (UIL) tested during production
- Industry-leading short circuit withstand capability
- Fast and reliable body diode with low VF and low QRR
- High and stable gate threshold voltage (VTH ) across all temperature and drain-bias conditions
- Advanced packaging technology for lower thermal resistance and lower ringing
- Manufacturing uniformity of RDS(ON), VTH and breakdown voltage (BV)
- Comprehensive product portfolio and safer supply chain with automotive-qualified high volume manufacturing

Applications:
- Solar (PV) Inverters
- EV / HEV Onboard Chargers
- Server & Telecom Power Supplies
- Uninterruptible Power Supplies (UPS)
- DC-DC Converters
- Switched Mode Power Supplies (SMPS)
- Energy Storage and Battery Charging
- Induction Heating 

All of GeneSiC Semiconductor's SiC MOSFETs are targeted for automotive applications (AEC-Q101) and PPAP-capable.

For datasheet and other resources, visit - https://www.genesicsemi.com/sic-mosfet/ or contact sales@genesicsemi.com

All devices are available from authorized distributors - https://www.genesicsemi.com/sales-support/

Digi-key Electronics
Newark Electronics
Mouser Electronics
Arrow Electronics

Tags:

GeneSiC Semiconductor, GeneSiC SiC MOSFET, Industry leading, SiC MOSFET, silicon carbide mosfet, 750V, Bare Chip, G3R Cheap Press Release Distribution Services, Affordable Press Release Services, Affordable Press Release Distribution Site, Free Press Release Network, Free Press Release Distribution

Company Information

Company Name Contact Person Contact Number Email Id Website Address
GeneSiC Semiconductor Inc.

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